IRG4PC50UD-EPBF Infineon Technologies IGBT Transistors V UltraFast 8- 60kHz datasheet, inventory, & pricing. IRG4PC50UD Transistor Datasheet, IRG4PC50UD Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component Catalog. IRG4PC50UD datasheet, IRG4PC50UD circuit, IRG4PC50UD data sheet: IRF – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT.

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Case-to-Sink, flat, greased surface.

Generation 4 IGBT’s offer highest efficiencies. Macro Waveforms for Figure 18a’s Test Circuit. Clamped Inductive Load Current R. Zero Datasehet Voltage Collector Current. Designed to be a “drop-in” replacement for equivalent.

Designed to be a “drop-in” replacement for equivalent. Data and specifications subject to change without notice. Energy losses include “tail” and. Tu rn -on lo sses inclu de. Energy losses include “tail” and.

T JJunction Temperature? Diode Peak Reverse Recovery Current. Diode Reverse Recovery Charge. Diode Peak Rate of Fall of Recovery.



Optimized for high operating. Junction-to-Ambient, typical socket mount. Ga te d rive a s spe cified. Industry standard TOAC package. Clamped Inductive Load Test. Gate – Collector Charge turn-on. V CE on typ.

Minimized recovery characteristics require. Total Gate Charge turn-on. Mounting Torque, or M3 Screw.

Diode Reverse Recovery Time. Diode Reverse Recovery Charge. C unless otherwise specified. Clamped Inductive Load Current R. Diode Continuous Forward Current.

Datasheet «IRG4PC50UD»

D im en sion s in M illim eters a nd Catasheet. Junction-to-Ambient, typical socket mount. Mounting Torque, or M3 Screw. Case-to-Sink, flat, greased surface. Diode Continuous Forward Current.

Diode Maximum Forward Current. T JJunction Temperature? IGBT’s optimized for specific application conditions.

IRG4PC50UD International Rectifier, IRG4PC50UD Datasheet

Industry standard TOAC package. D im en sion s in M illim eters a nd Inches. Minimized recovery characteristics require. V CE on typ. Du ty c ycle: Pulsed Collector Current Q.

Ga te d rive a s spe cified.