Ease of Paralleling. Maximum Ratings. TOAB. IRF IRF IRF NJ Semi-Conductors encourages customers to verify that datasheets are current. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power. Part, IRF Category, Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel. Description, A, V, Ohm, N-channel.
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Vishay – MOSFETs – IRF, SiHF – Power MOSFET
Please note that some Vishay documentation may still make reference to the IEC definition. Repetitive rating; pulse width limited by maximum junction temperature see fig.
B, Mar This datasheet is subject to change without notice.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Drain Current Current regulator Same type as D.
The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Customers using or selling Vishay products not expressly indicated for use in such applications do datasueet at their own risk. B, Mar 7 8 9 10 Fig. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Case Temperature td off tf tr Fig.
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