2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.

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2N_PDF Datasheet Download IC-ON-LINE

Variants datadheet higher voltage ratings e. Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies. Graf; William Sheets The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.

KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.

Commons category link from Wikidata. The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current dataeheet high- power circuits generally, including low frequency power converters although dstasheet use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher dstasheet switch-mode applications never was very practical. Retrieved 31 October It was produced exclusively by the Czechoslovakian electronics company Tesla.

New Jersey Semiconductor 2NN datasheet pdf

It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them. The art of electronics 2nd ed. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. In other projects Wikimedia Commons. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in Also the higher frequency response has improved performance when used in audio amplifiers.


It has a transition frequency of 2. The frequency at which gain begins to drop off may be much lower, see below.

(PDF) 2N3035 Datasheet download

The KD have higher power and higher current than 2N Views Read Edit View history. Modern 2N datasheets often, but not always, specify f T of 2.

Retrieved from ” https: Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.

The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.

Build your own low-power transmitters: It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. Other manufacturers around this time also would specify similar values e.

By using this site, you agree to the Terms of Use and Privacy Policy. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, ratasheet with cases or heatsinks that are not perfectly flat.


The robot builder’s bonanza 2nd ed. Wikimedia Commons has media related to 2N Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.

With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. Retrieved 7 November Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in datashest mids the f T could be as low as dahasheet.

RCA by had changed their specification to give 2.

The maximum collector-to-emitter voltage for the datssheet, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 volt23035 power transistor. It often has a transition frequency of around 3.