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10N60C Datasheet PDF Fairchild Semiconductor –
The remedies herein are not exclusive, but rather are cumulative and in addition to all other remedies available to ON Semiconductor. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. Licensee agrees that it shall comply fully with all relevant and applicable export laws and regulations of the United States or foreign governments “Export Laws” to ensure that neither the Content, nor any direct product thereof is: In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.
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Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2. Transistors are produced using planar stripe, 10n60cc technology. Licensee agrees that it has received a copy of the Content, including Software i. This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement.
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Nothing in this Agreement shall be construed as creating a joint venture, agency, partnership, trust or other similar association of any kind between the parties hereto. G E – very tight param 1. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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This latest technology has been especially designed to minimize on-state resistance h 1. All reports, documents, materials and other information collected or prepared during an audit shall be deemed to be the confidential information of Licensee “Licensee Confidential Information”and ON Datasheer shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be datashest to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described in this Section G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy parallel switching capability due to positive 1.
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The transistor can be used in variou 1. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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