10N60C DATASHEET PDF

Posted In Sex

10N60C Datasheet PDF Download – FQP10N60C, 10N60C data sheet. 10N60C Datasheet, 10N60C PDF, 10N60C Data sheet, 10N60C manual, 10N60C pdf, 10N60C, datenblatt, Electronics 10N60C, alldatasheet, free, datasheet. 10N60 Transistor Datasheet, 10N60 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.

Author: Mazujar Ditaxe
Country: Comoros
Language: English (Spanish)
Genre: Marketing
Published (Last): 6 November 2014
Pages: 104
PDF File Size: 20.97 Mb
ePub File Size: 4.76 Mb
ISBN: 981-6-80467-167-6
Downloads: 95219
Price: Free* [*Free Regsitration Required]
Uploader: Sajas

10N60C Datasheet PDF Fairchild Semiconductor –

The remedies herein are not exclusive, but rather are cumulative and in addition to all other remedies available to ON Semiconductor. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. Licensee agrees that it shall comply fully with all relevant and applicable export laws and regulations of the United States or foreign governments “Export Laws” to ensure that neither the Content, nor any direct product thereof is: In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.

The TO-3P type provide 1. At a minimum such license agreement shall safeguard ON Semiconductor’s ownership rights to the Software. Low Gate Charge Typ. Licensee is and shall be solely responsible and liable for any Modifications and for any Licensee Products, and for testing the Software, Modifications and Licensee Products, and for testing and implementation of the functionality of the Software and Modifications with the Licensee Products.

Datasheets search archive of electronic components datasheets

Except as expressly permitted in this Agreement, Licensee shall not disclose, or allow access 110n60c, the Content or Modifications to any third party. Except as expressly permitted in datasheeh Agreement, Licensee shall not use, modify, copy or distribute the Content or Modifications. This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the parties regarding the subject matter hereof.

Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2. Transistors are produced using planar stripe, 10n60cc technology. Licensee agrees that it has received a copy of the Content, including Software i. This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement.

You will receive an email when your request is approved.

dtasheet Licensee agrees that the delivery of any Software does not constitute a sale and the Software is only licensed. In that event, “Licensee” herein refers to such company.

Any provision of this Agreement which is held to be invalid or unenforceable by a court in any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and ineffective to the extent of such invalidity or unenforceability without invalidating the remaining portions hereof or affecting the validity or enforceability of such provision in any other jurisdiction.

  LAO SHE TEAHOUSE PDF

Source Absolute Maximum Ratings Symbol 1. The term of this agreement is perpetual unless terminated by ON Semiconductor as set forth herein. Such license agreement may be a “break-the-seal” or datasehet license agreement. The transistor can be used in various p 1. Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor. It is expressly understood that all Confidential Information transferred hereunder, and all dtasheet, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement.

Nothing in this Agreement shall be construed as creating a joint venture, agency, partnership, trust or other similar association of any kind between the parties hereto. G E – very tight param 1. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: Neither this Agreement, nor any of the rights or obligations herein, may be assigned or transferred by Licensee without the express prior written consent of ON Semiconductor, and any attempt to do so in violation of the foregoing shall be null and void. Nothing contained in this Agreement limits a party from filing a truthful complaint, or the party’s ability to communicate directly to, or otherwise participate in either: 10j60c Viewed Products Select Product This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto.

The transistor can be used in various 1. The parties hereto are for all purposes of this Agreement independent contractors, and neither shall hold itself out as having any authority to act as an agent or partner of the other party, or in any way bind or commit the other party to dahasheet obligations.

Drain Applications Pin 3: BOM, Gerber, user manual, schematic, test procedures, etc. Failure by either party hereto to enforce any term of this Agreement shall not be held a waiver of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set forth in a writing signed by the party charged with such daasheet.

However, during the term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create nor impose any future obligation on ON Semiconductor to provide any such Support.

Licensee agrees that it shall not issue any press releases containing, nor advertise, reference, reproduce, use or display, ON Semiconductor’s name or any ON Semiconductor trademark without ON Semiconductor’s express prior written consent in datashete instance; provided, however, that Licensee may indicate that the Licensee Product is interoperable with ON Semiconductor Products in product documentation and collateral material for the Licensee Product.

  DISTROFIA MUSCULAR MIOTNICA DE STEINERT PDF

The dattasheet Sections of this Agreement shall survive the 10nn60c or expiration of this Agreement for any reason: Subject to the foregoing, this Agreement shall be binding upon and inure to the benefit of the parties, their successors and assigns. Upon the effective date of termination of this Agreement, all licenses granted to Licensee hereunder shall terminate and Licensee shall cease all use, copying, modification and distribution of the Content and shall promptly either destroy or return to ON Semiconductor all copies of the Content in Licensee’s possession or under Licensee’s control.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t 1. Notwithstanding any terms to the contrary in any non-disclosure agreements between the Parties, Licensee shall treat this Agreement and the Content as ON Semiconductor’s “Confidential Information” including: Your request datssheet been submitted for approval.

Licensee shall not distribute externally or disclose to any Customer or to any third party any reports or statements that directly compare the speed, functionality or other performance results or characteristics of the Software with any similar third party products without the express prior written consent of ON Semiconductor in each instance; provided, however, that Licensee may disclose such reports or statements to Licensee’s consultants i that have a need to have access datawheet such reports or statements for purposes of the license grant of this Agreement, and ii that have entered into a written confidentiality agreement with Licensee no less restrictive than that certain NDA.

This latest technology has been especially designed to minimize on-state resistance h 1. All reports, documents, materials and other information collected or prepared during an audit shall be deemed to be the confidential information of Licensee “Licensee Confidential Information”and ON Datasheer shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be datashest to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described in this Section G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy parallel switching capability due to positive 1.

These devices are 1. Except as expressly permitted in this Agreement, Licensee shall not itself and shall restrict Customers from: Please allow business days for a response.

The transistor can be used in variou 1. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

The transistor can be used in various po 1. Within 30 days after the termination of the Agreement, Licensee shall furnish a statement certifying that all Content and related documentation have been destroyed or returned to ON Semiconductor.